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National Repository of Grey Literature 2 records found  Search took 0.08 seconds. 
Preparation of sample cross-sections and analysis by SIMS
 Karlovský, Juraj ; Pechal, Radim (referee) ; Bábor, Petr (advisor)
This thesis studies possible methods of semiconductor sample measurement by SIMS, with emphasis on testing different measurement parameters and sample preparation. Part of this master thesis deals with the design of a modified sample holder compatible with the used ToF-SIMS$^{5}$ instrument, IONTOF company, which is capable of tilting the sample by defined angle. This holder enables sample preparation in the main chamber of the instrument without the need of transferring the sample between instruments, which limits the probability of sample contamination. This sample holder was tested by ion machining of TIGBT sample edge and by imaging of a crater edge, created in previous measurement. Edge termination structures prepared by different techniques were measured on the TIGBT samples. Further measurements with the goal of optimizing the depth resolution for thin layers were done on Molybdenum-Silicon-multilayer X-Ray Mirror. Part of the measurements was focused on comparing depth profiles measured at low temperatures. For these measurements the samples with Indium multilayers in GaN substrate were used.
Detailed record
Preparation of sample cross-sections and analysis by SIMS
 Karlovský, Juraj ; Pechal, Radim (referee) ; Bábor, Petr (advisor)
This thesis studies possible methods of semiconductor sample measurement by SIMS, with emphasis on testing different measurement parameters and sample preparation. Part of this master thesis deals with the design of a modified sample holder compatible with the used ToF-SIMS$^{5}$ instrument, IONTOF company, which is capable of tilting the sample by defined angle. This holder enables sample preparation in the main chamber of the instrument without the need of transferring the sample between instruments, which limits the probability of sample contamination. This sample holder was tested by ion machining of TIGBT sample edge and by imaging of a crater edge, created in previous measurement. Edge termination structures prepared by different techniques were measured on the TIGBT samples. Further measurements with the goal of optimizing the depth resolution for thin layers were done on Molybdenum-Silicon-multilayer X-Ray Mirror. Part of the measurements was focused on comparing depth profiles measured at low temperatures. For these measurements the samples with Indium multilayers in GaN substrate were used.
Detailed record

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